Control of sidegating effects in AlGaAs/GaAs heterostructure field‐effect transistors by modification of GaAs wafer surfaces
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.347110
Reference13 articles.
1. Backgating in GaAs/(Al,Ga)As modulation‐doped field‐effect transistors and its reduction with a superlattice
2. Reduction of backgating effect in MBE-Grown GaAs/AlGaAs HEMT's
3. Interface and doping profile characteristics with molecular‐beam epitaxy of GaAs: GaAs voltage varactor
4. Effect of Thermal Etching on GaAs Substrate in Molecular Beam Epitaxy
5. UV/ozone cleaning of surfaces
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