New methods for the characterization of surface states density and substrate/epilayer interface states in pseudomorphic AlGaAs/InGaAs/GaAs heterostructures-Reference-Cited by-同舟云学术

New methods for the characterization of surface states density and substrate/epilayer interface states in pseudomorphic AlGaAs/InGaAs/GaAs heterostructures

Published:1999-12 Issue:1-3 Volume:66 Page:157-161
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Mosser Vincent,Callen Olivier,Kobbi Farah,Adam Didier,Grattepain Claude,Draidia Nasser

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference9 articles.

1. V. Mosser, F. Kobbi, S. Contreras, J.M. Mercy, O. Callen, J.L. Robert, S. Aboulhouda, J. Chevrier and D. Adam, Low-cost 2DEG magnetic sensor with metrological performances for magnetic field and current sensing, Proceedings of Transducers 97, Chicago, June 1997.

2. High performance Hall sensors based on III-V heterostructures;Mosser;Sensors Actuators,1994

3. UV-ozone cleaning of GaAs for MBE;McClintock;J. Vac. Sci. Technol.,1982

4. V. Mosser, S. Contreras, S. Aboulhouda, P. Lorenzini, F. Kobbi, J.L. Robert and K. Zekentes, Physics of AlGaAs/InGaAs/GaAs heterostructures for high performance magnetic sensors, Proceedings of the ESSDERC 93 conference, Ed. Frontieres, Grenoble, France, Sept. 1993, pp. 659–662.

5. Control of sidegating effects in AlGaAs/GaAs field-effect transistors by modification of GaAs wafer surfaces;Gray;J. Appl. Phys.,1990

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Temperature-dependent charge-carrier transport between Si-δ-doped layers and AlGaAs/InGaAs/AlGaAs quantum well with various space layer thicknesses measured by Hall-effect analysis;Scientific Reports;2020-07-27

2. A Spinning Current Circuit for Hall Measurements Down to the Nanotesla Range;IEEE Transactions on Instrumentation and Measurement;2017-04

3. Low-frequency noise in AlGaAs/InGaAs/GaAs Hall micromagnetometers;SPIE Proceedings;2003-05-09

4. Nano-tesla magnetic field magnetometry using an InGaAs–AlGaAs–GaAs 2DEG Hall sensor;Sensors and Actuators A: Physical;2003-01-01

5. Absolute determination of the Fermi level pinning at the dielectric/semiconductor interface in GaAs based heterostructures;Materials Science and Engineering: B;2001-03