Absolute determination of the Fermi level pinning at the dielectric/semiconductor interface in GaAs based heterostructures
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference11 articles.
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2. Characterization of the interface and the bulk phenomena in metal–SiO2–(n) GaAs structure by analysis of the equivalent circuit parameters at different temperatures;Thin Solid Films;2004-11
3. Studies of GaAs metal–insulator–semiconductor structures by the admittance spectroscopy method;Applied Surface Science;2004-08
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