Molecular beam epitaxy regrowth by use of ammonium sulfide chemical treatments
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102566
Reference24 articles.
1. XPS measurement of GaAs–AlAs heterojunction band discontinuities: Growth sequence dependence
2. Arsenic passivation: a possible remedy for MBE growth-interruption problems
3. Nucleation and characterization of pseudomorphic ZnSe grown on molecular beam epitaxially grown GaAs epilayers
4. Electrical characterization of an epitaxial ZnSe/epitaxial GaAs heterointerface
5. Protection of an interrupted molecular‐beam epitaxially grown surface by a thin epitaxial layer of InAs
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2. Formation of Defects in MBE Re-Grown GaAs Films on GaAs/AlGaAs Heterostructures;MRS Proceedings;2002
3. Sulfide treatment of GaSb surface: influence on the LPE growth of InGaAsSb/AlGaAsSb heterostructures;Vacuum;2000-05
4. Chalcogenide passivation of III–V semiconductor surfaces;Semiconductors;1998-11
5. Sulfide-passivated GaAs(001). I. Chemistry analysis by photoemission and reflectance anisotropy spectroscopies;Physical Review B;1996-02-15
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