Effects of storage time of epi-ready InP:Fe substrates on the quality of metalorganic vapour phase epitaxial grown InP
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
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1. Native oxides formation and surface wettability of epitaxial III–V materials: The case of InP and GaAs;Applied Surface Science;2016-10
2. Growth and characterization of iron-doped semi-insulating InP buffer layers for Al-free GaInP/GaInAs high electron mobility transistors;Journal of Applied Physics;2010-12
3. Synthesis and Characterization of Highly Resistive Epitaxial Indium-Doped SnO2;Applied Physics Express;2010-05-14
4. Investigation for Epi-Ready Treatment Process of InP Substrates;Journal of the Korean Physical Society;2009-02-14
5. Effects of Low-Oxygen-Content Metalorganic Precursors on AlInAs and High Electron Mobility Transistor Structures with the Thick AlInAs Buffer Layer;Japanese Journal of Applied Physics;2003-08-15
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