Characteristics of Excimer Laser-Annealed Thin-Film Transistors on the Polycrystalline Silicon Morphology Formed in the Single and Double (Overlap) Scanned Area-Reference-Cited by-同舟云学术

Characteristics of Excimer Laser-Annealed Thin-Film Transistors on the Polycrystalline Silicon Morphology Formed in the Single and Double (Overlap) Scanned Area

Published:2010-04-20 Issue:4 Volume:49 Page:041301
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Jin GuangHai,Kim Moojin

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference13 articles.

1. High-performance thin-film transistors fabricated using excimer laser processing and grain engineering

2. A systematic study and optimization of parameters affecting grain size and surface roughness in excimer laser annealed polysilicon thin films

3. The Impact of Annealing Ambient on the Performance of Excimer‐Laser‐Annealed Polysilicon Thin‐Film Transistors

4. 41.2: Micro Silicon Technology for Active Matrix OLED Display

5. Crystallization Process of Polycrystalline Silicon by KrF Excimer Laser Annealing

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