Effects of Solid Phase Crystallization Condition and Gate Insulator Thickness on Device Properties of Poly-Si Thin Film Transistors
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Published:2016-02-01
Issue:1
Volume:11
Page:122-128
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ISSN:1555-130X
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Container-title:Journal of Nanoelectronics and Optoelectronics
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language:en
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Short-container-title:Journal of Nanoelectronics and Optoelectronics
Author:
Kim Kyoung-Bo,Kim Moojin,Lee Hong-Chan,Lee Jongpil,Jin Guanghai,Lee Sung-Nam,Lee Dongyun
Publisher
American Scientific Publishers
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials