The Impact of Annealing Ambient on the Performance of Excimer‐Laser‐Annealed Polysilicon Thin‐Film Transistors-Reference-Cited by-同舟云学术

The Impact of Annealing Ambient on the Performance of Excimer‐Laser‐Annealed Polysilicon Thin‐Film Transistors

Published:1999-09-01 Issue:9 Volume:146 Page:3500-3505
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Voutsas Apostolos T.¹,Marmorstein Aaron M.²,Solanki Raj²

Affiliation:

1. Sharp Microelectronics Technology, Incorporated, Corporate Strategic Engineering Center, Camas, Washington 98607, United States of America

2. Department of Electrical Engineering, Oregon Graduate Institute of Science and Technology, Beaverton, Oregon 97291, United States of America

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.1392504/pdf

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