A Fully Integrated Aluminum Dual Damascene Process Using a New Double Stopper Structure-Reference-Cited by-同舟云学术

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A Fully Integrated Aluminum Dual Damascene Process Using a New Double Stopper Structure

Published:1998-10-15 Issue:Part 1, No. 10 Volume:37 Page:5526-5532
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Anand Minakshisundaran B.,Nakamura Naofumi,Wada Jun-ichi,Oikawa Yasushi,Katata Tomio,Shiba Katsuyasu,Shibata Hideki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of Gap Fill Materials for Planarizing Substrate in Via-First Dual Damascene Lithography Process;Japanese Journal of Applied Physics;2007-09-07

2. Copper Hillock Induced Copper Diffusion and Corrosion Behavior in a Dual Damascene Process;Electrochemical and Solid-State Letters;2007

3. Avoiding Cu Hillocks during the Plasma Process;Journal of The Electrochemical Society;2004

4. Liner schemes of the aluminum damascene interconnection for sub-0.2 μm line pitch metallization;Solid-State Electronics;2003-10

5. Surface Morphology Improvement of Metalorganic Chemical Vapor Deposition Al Films by Layered Deposition of Al and Ultrathin TiN;Japanese Journal of Applied Physics;2000-06-15

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