Copper Hillock Induced Copper Diffusion and Corrosion Behavior in a Dual Damascene Process-Reference-Cited by-同舟云学术

Copper Hillock Induced Copper Diffusion and Corrosion Behavior in a Dual Damascene Process

Published:2007 Issue:6 Volume:10 Page:H193
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Kim Sangchul,Shim Cheonman,Hong Jiho,Lee Hanchoon,Han Jaewon,Kim Keeho,Kim Youngmin

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference9 articles.

1. A Fully Integrated Aluminum Dual Damascene Process Using a New Double Stopper Structure

2. Avoiding Cu Hillocks during the Plasma Process

3. Barrier Properties of Very Thin Ta and TaN Layers Against Copper Diffusion

4. The initial stages of the formation of holes and hillocks in thin films under equal biaxial stress

5. D. Louis, M. Assous, R. Blanc, Ph. Brun, C. Arvet, E. Lajoinie, and D. Holmes , in Proceedings of the IEEE 2001 International Interconnect Technology Conference , IEEE, p. 289 (2001).

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