Characterization of Gap Fill Materials for Planarizing Substrate in Via-First Dual Damascene Lithography Process
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference16 articles.
1. Developer-soluble gap fill materials for patterning metal trenches in via-first dual-damascene process
2. Development of full-fill bottom antireflective coatings for dual-damascene process
3. Via fill properties of organic BARCs in dual-damascene application
4. Dual Damascene Interconnect Technology for 130-nm-node Complementary Metal–Oxide–Semiconductor Devices Using Ladder-Oxide Film
5. Dual Damascene Etching Process Using Sacrificial Spin-on-Glass Film
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1. Lowering the photoresist swing effect to increase the lithographic critical dimension uniformity: one step ahead in perfecting the dual damascene module.;Advances in Patterning Materials and Processes XXXIX;2022-05-25
2. Development of hard-mask resist materials in nanoimprint lithography;SPIE Proceedings;2011-03-17
3. Step and Flash Imprint of Fluorinated Silicon-Containing Resist Materials for Three-Dimensional Nanofabrication;Japanese Journal of Applied Physics;2010-07-20
4. Resist Poisoning Studies of Gap Fill Materials for Patterning Metal Trenches in Via-First Dual Damascene Process;Japanese Journal of Applied Physics;2008-12-19
5. Development of Developer-Soluble Gap Fill Materials for Planarization in Via-First Dual Damascene Process;Japanese Journal of Applied Physics;2008-05-16
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