GaAsBi Photoconductive Terahertz Detector Sensitivity at Long Excitation Wavelengths
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/5/i=2/a=022601/pdf
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1. Optical and electronic properties of doped silicon from 0.1 to 2 THz
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5. Terahertz-frequency photoconductive detectors fabricated from metal-organic chemical vapor deposition-grown Fe-doped InGaAs
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