Abstract
Abstract
This study revealed the crystalline quality of the dilute bismide alloy GaAs1−x
Bi
x
grown on a GaAs(001) substrate below 250 °C using molecular beam epitaxy. The substrate temperature and As flux played a dominant role in tuning the crystal structure between amorphous and single crystalline GaAs1−x
Bi
x
, as well as in the Bi introduction in GaAs below 250 °C. Sample characterization demonstrated a substrate temperature of 250 °C produced single crystalline ∼200 nm thick GaAs0.982Bi0.018 with clear X-ray diffraction fringes, while the lower substrate temperature of 180 °C yielded an amorphous film. Rutherford backscattering spectrometry showed sufficient As supply at the growing surface provides uniform Bi distribution.
Funder
Japan Society for the Promotion of Science
Iketani Science and Technology Foundation
Subject
General Physics and Astronomy,General Engineering
Cited by
1 articles.
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