Optical-to-terahertz switches: state of the art and new opportunities for multispectral imaging-Reference-Cited by-同舟云学术

Optical-to-terahertz switches: state of the art and new opportunities for multispectral imaging

Published:2023-07 Issue:01 Volume:194 Page:2-22
ISSN:0042-1294
Container-title:Uspekhi Fizicheskih Nauk
language:ru
Short-container-title:Usp. Fiz. Nauk

Author:

Ponomarev Dmitrii S.¹²³,Yachmenev Alexander E.¹,Lavrukhin D.V.¹²,Khabibullin Rustam A.¹³,Chernomyrdin Nikita V.²,Spektor Igor' E.²,Kurlov Vladimir N.⁴,Kveder Vitalii V.⁴,Zaytsev Kirill I.²

Affiliation:

1. V. G. Mokerov Institute of Ultra High Frequency Semiconductor Electronics of the Russian Academy of Sciences, Nagornyi proezd, 7, p. 5 , Moscow, 117105, Russian Federation

2. Prokhorov General Physics Institute of the Russian Academy of Sciences, ul. Vavilova 38, Moscow, 119991, Russian Federation

3. Moscow Institute of Physics and Technology (National Research University), Institutskii per. 9, Dolgoprudny, Moscow Region, 141701, Russian Federation

4. Osipyan Institute of Solid State Physics, Russian Academy of Sciences, Akademika Osip'yana str. 2, Chernogolovka, Moscow Region, 142432, Russian Federation

Publisher

Uspekhi Fizicheskikh Nauk (UFN) Journal

Subject

General Physics and Astronomy

Reference292 articles.

1. Iron doped InGaAs: Competitive THz emitters and detectors fabricated from the same photoconductor

2. Photoconductive terahertz detectors with 105 dB peak dynamic range made of rhodium doped InGaAs

3. Arsenides-and related III-V materials-based multilayered structures for terahertz applications: Various designs and growth technology

4. Up to 70 THz bandwidth from an implanted Ge photoconductive antenna excited by a femtosecond Er:fibre laser

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