Iron doped InGaAs: Competitive THz emitters and detectors fabricated from the same photoconductor
Author:
Affiliation:
1. Fraunhofer Institute for Telecommunications, Heinrich Hertz Institute, Einsteinufer 37, 10587 Berlin, Germany
2. Department of Physics, Humboldt University Berlin, Newtonstrasse 15, 12489 Berlin, Germany
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4975039
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1. Terahertz-time domain spectrometer with 90 dB peak dynamic range
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4. 64 μW pulsed terahertz emission from growth optimized InGaAs/InAlAs heterostructures with separated photoconductive and trapping regions
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