HfOxNyThin-Film Formation on Three-Dimensional Si Structure Utilizing Electron Cyclotron Resonance Sputtering
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
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2. The Effect of PMA with TiN Gate Electrode on the Formation of Ferroelectric Undoped HfO2 Directly Deposited on Si(100);IEICE Transactions on Electronics;2019-06-01
3. Excellent Current Drivability and Environmental Stability in Room-Temperature-Fabricated Pentacene-Based Organic Field-Effect Transistors With ${\rm HfO}_{2}$ Gate Insulators;IEEE Transactions on Electron Devices;2014-02
4. Influence of Si Surface Roughness on Electrical Characteristics of MOSFET with HfON Gate Insulator Formed by ECR Plasma Sputtering;IEICE Transactions on Electronics;2014
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