Effect of the Ingot Cooling on the Grown-in Defects in Silicon Czochralski Growth
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference9 articles.
1. The mechanism of swirl defects formation in silicon
2. Effect of the crystal–melt interface on the grown-in defects in silicon CZ growth
3. Effect of intrinsic point defects on copper precipitation in large-diameter Czochralski silicon
4. Deposition of Copper from a Buffered Oxide Etchant onto Silicon Wafers
5. Effect of zero-Gauss plane and magnetic intensity on oxygen concentration in cusp-magnetic CZ crystals
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1. Influence of Thermal Conductivity and Emissivity of Heat Shield Surface Material on the Thermal Field of Czochralski Silicon Crystal Growth;Silicon;2024-06-08
2. Effect of Water-Cooling Jacket on Thermal Stress of Large-Diameter Silicon Grown by Czochralski Method;Silicon;2024-04-29
3. A Critical Review of The Process and Challenges of Silicon Crystal Growth for Photovoltaic Applications;Crystal Research and Technology;2023-11-28
4. The Effect of Physical Property Parameters of the Insulation Material Inside the Heat Shield on the Growth of Czochralski Silicon Crystal;Silicon;2023-11-28
5. Effect of water-cooled jacket on the oxygen transport during the Czochralski silicon crystal growth process;Journal of Crystal Growth;2023-05
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