Effect of intrinsic point defects on copper precipitation in large-diameter Czochralski silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1617377
Reference18 articles.
1. Electrical properties and recombination activity of copper, nickel and cobalt in silicon
2. Physics of Copper in Silicon
3. Out-Diffusion and Precipitation of Copper in Silicon: An Electrostatic Model
4. Diffusion, solubility and gettering of copper in silicon
5. Recombination activity of copper in silicon
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1. Electrical Activity of Iron and Copper in Si, SiGe and Ge;Metal Impurities in Silicon- and Germanium-Based Technologies;2018
2. Correlation between Copper Precipitation and Grown-In Oxygen Precipitates in 300~mm Czochralski Silicon Wafer;Acta Physica Polonica A;2014-04
3. Effect of rapid thermal processing on copper precipitation in p/p+ silicon epitaxial wafers with heavily boron-doped substrates;Journal of Applied Physics;2014-01-14
4. Influence of co-precipitation of copper and nickel on the formation of a denuded zone in Czochralski silicon;Journal of Semiconductors;2013-10
5. Effect of asymmetric magnetic fields on crystal–melt interface in silicon CZ process;Journal of Crystal Growth;2013-03
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