Effect of rapid thermal processing on copper precipitation in p/p+ silicon epitaxial wafers with heavily boron-doped substrates
Author:
Funder
NNSFC
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4862179
Reference22 articles.
1. Mechanical strength of silicon crystals with oxygen and boron impurities
2. Effect of Rapid Thermal Process on Oxygen Precipitation in Heavily Boron-Doped Czochralski Silicon Wafer
3. Grown-in Defects in Heavily Boron-Doped Czochralski Silicon
4. Rapid-thermal-processing-based internal gettering for heavily boron-doped Czochralski silicon
5. Diffusion, solubility and gettering of copper in silicon
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