Effect of zero-Gauss plane and magnetic intensity on oxygen concentration in cusp-magnetic CZ crystals
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. The effects of argon gas flow rate and furnace pressure on oxygen concentration in Czochralski-grown silicon crystals
2. Oxygen concentration in the Czochralski-grown crystals with cusp-magnetic field
3. Buoyant-thermocapillary and pure thermocapillary convective instabilities in Czochralski systems
4. Oscillatory thermocapillary convection in open cylindrical annuli. Part 1. Experiments under microgravity
5. Oscillatory thermocapillary convection in open cylindrical annuli. Part 2. Simulations
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1. A Critical Review of The Process and Challenges of Silicon Crystal Growth for Photovoltaic Applications;Crystal Research and Technology;2023-11-28
2. Effects of different cusp magnetic ratios and crucible rotation conditions on oxygen transport and point defect formation during Cz silicon crystal growth;Materials Science in Semiconductor Processing;2021-06
3. Effects of crystal-crucible iso-rotation and a balanced/unbalanced cusp magnetic field on the heat, flow, and oxygen transport in a Czochralski silicon melt;Journal of Crystal Growth;2020-02
4. Numerical simulation of heat and mass transfer during Czochralski silicon crystal growth under the application of crystal-crucible counter- and iso-rotations;Journal of Crystal Growth;2019-02
5. Effect of Location of Zero Gauss Plane on Oxygen Concentration at Crystal Melt Interface During Growth of Magnetic Silicon Single Crystal Using Czochralski Technique;Procedia Technology;2016
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