Oxygen concentration in the Czochralski-grown crystals with cusp-magnetic field
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. The effects of argon gas flow rate and furnace pressure on oxygen concentration in Czochralski-grown silicon crystals
2. Transient three-dimensional numerical computation for unsteady oxygen concentration in a silicon melt during a Czochralski process under a cusp-shaped magnetic field
3. Oxygen distribution in silicon melt under inhomogeneous transverse-magnetic fields
4. Controlling oxygen concentration and distribution in 200mm diameter Si crystals using the electromagnetic Czochralski (EMCZ) method
5. Buoyant-thermocapillary and pure thermocapillary convective instabilities in Czochralski systems
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1. A novel approach to reduce the oxygen content in monocrystalline silicon by Czochralski method;Journal of Crystal Growth;2024-03
2. Reduction of oxygen concentration in 300 mm diameter n-type Czochralski silicon crystal growth using an optimized heating zone with dual side-heaters;CrystEngComm;2024
3. A Critical Review of The Process and Challenges of Silicon Crystal Growth for Photovoltaic Applications;Crystal Research and Technology;2023-11-28
4. Study on Oxygen Control of Large Diameter N-type Monocrystalline Silicon with Large Thermal Field;Silicon;2023-10-19
5. Investigation of Oxygen Behavior under Different Melt Flow, Diffusion Boundary Layer, and Crystal-Melt Interface in a 300 mm Silicon Crystal Growth with Cusp Magnetic Field;Coatings;2023-09-18
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