Reduction of oxygen concentration in 300 mm diameter n-type Czochralski silicon crystal growth using an optimized heating zone with dual side-heaters-Reference-Cited by-同舟云学术

Reduction of oxygen concentration in 300 mm diameter n-type Czochralski silicon crystal growth using an optimized heating zone with dual side-heaters

Published:2024 Issue:29 Volume:26 Page:3920-3928
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Liu Peidong¹²,Hu Zechen¹^ORCID,Yang Yang²,Li Huimin²,Li Xiangyu²,Sun Ziyang²,Guo Jinwei²,Yang Deren¹³^ORCID,Yu Xuegong¹³^ORCID

Affiliation:

1. State Key Laboratory of Silicon and Advanced Semiconductor Materials, and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China

2. Hoyuan New Material (Baotou) Co., Ltd., Baotou, 014030, P. R. China

3. Institute of Information and Functional Materials, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou 311215, P. R. China

Abstract

In this study, the modified heating zone structure for 300 mm diameter Cz-Si crystal growth with dual side-heaters has been proposed. Based on it, 300 mm diameter n-type RCz-Si crystals with the oxygen concentration of 9.5–10.5 ppma were obtained.

Funder

Natural Science Foundation of Zhejiang Province

Fundamental Research Funds for the Central Universities

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/CE/D4CE00363B

Reference35 articles.

1. Thermodynamical analysis of oxygen incorporation from a quartz crucible during solidification of multicrystalline silicon for solar cell

2. Advanced chemical model for analysis of Cz and DS Si-crystal growth

3. Improved hot-zone for manufacturing low-oxygen silicon ingots for passivated emitter and rear cell

4. Comprehensive characterization of efficiency limiting defects in the swirl-shaped region of Czochralski silicon

5. Ring‐Like Defect Formation in N‐Type Czochralski‐Grown Silicon Wafers during Thermal Donor Formation