Improved hot-zone for manufacturing low-oxygen silicon ingots for passivated emitter and rear cell-Reference-Cited by-同舟云学术

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Improved hot-zone for manufacturing low-oxygen silicon ingots for passivated emitter and rear cell

Published:2018-06-06 Issue:8S3 Volume:57 Page:08RB02
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Baik Sungsun,Jeong Ah,Kang Ji Min,Hahn Youngsik,Nam Woo-Joon,Nam Wooseok

Funder

Ministry of Trade, Industry and Energy

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/57/i=8S3/a=08RB02/pdf

Reference33 articles.

1. Oxygen precipitation in silicon

2. Grown-in microdefects, residual vacancies and oxygen precipitation bands in Czochralski silicon

3. The Behavior of Oxygen Precipitates in Silicon at High Process Temperature

4. Oxygen diffusion and precipitation in Czochralski silicon

5. Iron in silicon: Interactions with radiation defects, carbon, and oxygen

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reduction of oxygen concentration in 300 mm diameter n-type Czochralski silicon crystal growth using an optimized heating zone with dual side-heaters;CrystEngComm;2024

2. Study on Oxygen Control of Large Diameter N-type Monocrystalline Silicon with Large Thermal Field;Silicon;2023-10-19

3. Novel Way to Assess the Validity of Czochralski Growth Simulations;physica status solidi (a);2019-07-10

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