Novel Way to Assess the Validity of Czochralski Growth Simulations-Reference-Cited by-同舟云学术

Novel Way to Assess the Validity of Czochralski Growth Simulations

Published:2019-07-10 Issue:17 Volume:216 Page:1900317
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Veirman Jordi¹²^ORCID,Letty Elénore¹²,Favre Wilfried¹²,Albaric Mickael¹²,Pelletier David¹²,Lemiti Mustapha³

Affiliation:

1. DTSDepartment of Solar EnergiesUniv. Grenoble Alpes, INES F-73375 Le Bourget du Lac France

2. Département des Technologies SolairesCEA, LITEN F-73375 Le Bourget du Lac France

3. INLInstitute of Nanotechnologies of LyonUniversité de Lyon, INL, CNRS 7, avenue Jean Capelle, Bâtiment Blaise Pascal 69100 Villeurbanne France

Funder

Agence Nationale de la Recherche

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900317

Reference29 articles.

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3. Z.Li Master Thesis NTNU Trondheim January 2015.

4. Optimization of crystal growth by changes of flow guide, radiation shield and sidewall insulation in Cz Si furnace

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1. Experimental and Theoretical Study of Oxygen Precipitation and the Resulting Limitation of Silicon Solar Cell Wafers;IEEE Journal of Photovoltaics;2021-03

2. Numerical method for thermal donors formation simulation during silicon Czochralski growth;Solar Energy Materials and Solar Cells;2021-01

3. Ring‐Like Defect Formation in N‐Type Czochralski‐Grown Silicon Wafers during Thermal Donor Formation;physica status solidi (a);2020-12-18