Transient three-dimensional numerical computation for unsteady oxygen concentration in a silicon melt during a Czochralski process under a cusp-shaped magnetic field-Reference-Cited by-同舟云学术

Transient three-dimensional numerical computation for unsteady oxygen concentration in a silicon melt during a Czochralski process under a cusp-shaped magnetic field

Published:2001-12 Issue:4 Volume:233 Page:622-630
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Won Yoo Cheol,Kakimoto Koichi,Ozoe Hiroyuki

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference22 articles.

1. Semiconductor Silicon 1977;Pearce,1977

2. Effect of oxygen on dislocation movement in silicon

3. Intrinsic gettering by oxide precipitate induced dislocations in Czochralski Si

4. Semiconductor Silicon 1981;Hoshikawa,1981

5. The effects of argon gas flow rate and furnace pressure on oxygen concentration in Czochralski-grown silicon crystals

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