Effect of Attenuated Phase Shift Mask Structure on Extreme Ultraviolet Lithography-Reference-Cited by-同舟云学术

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Effect of Attenuated Phase Shift Mask Structure on Extreme Ultraviolet Lithography

Published:2009-06-22 Issue:6 Volume:48 Page:06FA06
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Shin Hyun-Duck,Jeoung Chang Young,Kim Tae Geun,Lee Sangsul,Park In-Sung,Ahn Jinho

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference7 articles.

1. Pattern printability for off-axis incident light in EUV lithography

2. Shadowing effect minimization in EUV mask by modeling

3. Impact of EUVL mask buffer and absorber material properties on mask quality and performance

4. Novel design of att-PSM structure for extreme-ultraviolet lithography and enhancement of image contrast during inspection

5. Characterization of Ru layer for capping/buffer application in EUVL mask

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. SCAPSM: attenuated phase-shift mask structure for EUV lithography;Applied Optics;2024-03-14

2. Attenuated phase shift masks: a wild card resolution enhancement for extreme ultraviolet lithography?;Journal of Micro/Nanopatterning, Materials, and Metrology;2022-05-11

3. Attenuated phase shift mask for extreme ultraviolet: can they mitigate three-dimensional mask effects?;Journal of Micro/Nanolithography, MEMS, and MOEMS;2018-08-11

4. Attenuated PSM for EUV: Can they mitigate 3D mask effects?;Extreme Ultraviolet (EUV) Lithography IX;2018-03-19

5. Coherent scattering microscopy as an effective inspection tool for analyzing performance of phase shift mask;Optics Express;2016-05-25

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