Attenuated PSM for EUV: Can they mitigate 3D mask effects?-Reference-Cited by-同舟云学术

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Attenuated PSM for EUV: Can they mitigate 3D mask effects?

Published:2018-03-19 Issue: Volume: Page:
ISSN:
Container-title:Extreme Ultraviolet (EUV) Lithography IX
language:
Short-container-title:

Author:

Erdmann Andreas,Evanschitzky Peter,Philipsen Vicky,Bauer Markus,Hendrickx Eric,Mesilhy Hazem

Publisher

SPIE

Reference25 articles.

1. Interactions of 3D mask effects and NA in EUV lithography;Neumann,2012

2. Mask 3D effects and compensation for high NA EUV lithography;Raghunathan,2013

3. Mitigation of mask three-dimensional induced phase effects by absorber optimization in ArFiand extreme ultraviolet lithography

4. Characterization and mitigation of 3D mask effects in extreme ultraviolet lithography;Erdmann,2017

5. Reducing extreme ultraviolet mask three-dimensional effects by alternative metal absorbers

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1. Pushing the boundaries of random logic metal patterning with low-n EUV single exposure;Optical and EUV Nanolithography XXXVII;2024-04-10

2. Understanding and measuring EUV mask 3D effects;Optical and EUV Nanolithography XXXVII;2024-04-10

3. Identifying new absorber materials for EUV photomasks;Photomask Technology 2023;2023-11-21

4. EUV APSM mask prospects and challenges;Photomask Technology 2023;2023-11-21

5. Mask absorber, mask tone, and wafer process impact on resist line-edge-roughness;Journal of Micro/Nanopatterning, Materials, and Metrology;2023-10-13

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