276 nm Substrate-Free Flip-Chip AlGaN Light-Emitting Diodes-Reference-Cited by-同舟云学术

276 nm Substrate-Free Flip-Chip AlGaN Light-Emitting Diodes

Published:2011-02-25 Issue:3 Volume:4 Page:032102
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Hwang Seongmo,Morgan Daniel,Kesler Amanda,Lachab Mohamed,Zhang Bin,Heidari Ahmad,Nazir Haseeb,Ahmad Iftikhar,Dion Joe,Fareed Qhalid,Adivarahan Vinod,Islam Monirul,Khan Asif

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/4/i=3/a=032102/pdf

Reference23 articles.

1. Sub-Milliwatt Power III-N Light Emitting Diodes at 285 nm

2. III–Nitride UV Devices

3. 10 Milliwatt Pulse Operation of 265 nm AlGaN Light Emitting Diodes

4. Improvement in Output Power of 280-nm Deep Ultraviolet Light-Emitting Diode by Using AlGaN Multi Quantum Wells

5. Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes

Cited by 51 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Laser lift-off technique for applications in III-N microelectronics: A review;Microelectronic Engineering;2024-07

2. SiC/Si Hybrid Substrate Synthesized by the Method of Coordinated Substitution of Atoms: A New Type of Substrate for LEDs;Coatings;2023-06-24

3. Increased Light Extraction of Thin-Film Flip-Chip UVB LEDs by Surface Texturing;ACS Photonics;2023-01-24

4. First-principles study for self-limiting growth of GaN layers on AlN(0001) surface;Japanese Journal of Applied Physics;2023-01-09

5. Study on combined reflectors for improving efficiency of high power near-infrared emitters;Journal of Luminescence;2022-10