10 Milliwatt Pulse Operation of 265 nm AlGaN Light Emitting Diodes-Reference-Cited by-同舟云学术

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10 Milliwatt Pulse Operation of 265 nm AlGaN Light Emitting Diodes

Published:2004-12-24 Issue:3 Volume:44 Page:L98-L100
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Bilenko Yuriy,Lunev Alex,Hu Xuhong,Deng Jianyu,Katona Thomas M,Zhang Jianping,Gaska Remis,Shur Michael S,Sun Wenhong,Adivarahan Vinod,Shatalov Maxim,Khan Asif

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 55 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. Deep-ultraviolet integrated photonic and optoelectronic devices: A prospect of the hybridization of group III–nitrides, III–oxides, and two-dimensional materials;Journal of Semiconductors;2019-12-01

4. Enhancing Wall-Plug Efficiency for Deep-UV Light-Emitting Diodes: From Crystal Growth to Devices;Light-Emitting Diodes;2019

5. Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes;Crystals;2017-10-04

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