Structural Characterisation of Improved GaN Epilayers Grown on a Ge(111) Substrate
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/4/i=9/a=091001/pdf
Reference12 articles.
1. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
2. High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap
3. Growth of GaN on Ge(111) by molecular beam epitaxy
4. Misoriented domains in (0001)-GaN/(111)-Ge grown by molecular beam epitaxy
5. Structural features in GaN grown on a Ge(111) substrate
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Interfacial Structure and Chemistry of GaN on Ge(111);Physical Review Letters;2013-12-16
2. (Invited) Hybrid-Formation of Ge-on-Insulator Structures on Si Platform by SiGe-Mixing-Triggered Rapid-Melting Growth --- A Road to Artificial Crystal ---;ECS Transactions;2013-03-15
3. Optical and structural characterization of N-face GaN epilayers grown on Ge (111) by plasma assisted molecular beam epitaxy;CrystEngComm;2013
4. Enhanced Interfacial-Nucleation in Al-Induced Crystallization for (111) Oriented Si1–xGex(0 ≤x≤ 1) Films on Insulating Substrates;ECS Journal of Solid State Science and Technology;2012
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