Growth of GaN on Ge(111) by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2410221
Reference8 articles.
1. Substrates for gallium nitride epitaxy
2. Buffer-layer-free growth of high-quality epitaxial GaN films on 4H-SiC substrate by metal-organic chemical vapor deposition
3. Growth of InN on Ge substrate by molecular beam epitaxy
4. A. J. McAlister and J. L. Murray, Binary Alloy Phase Diagrams, 2nd ed. (ASM International, Metals Park, OH, 1990), Vol. 2, p. 1956.
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