Interfacial Structure and Chemistry of GaN on Ge(111)-Reference-Cited by-同舟云学术

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Interfacial Structure and Chemistry of GaN on Ge(111)

Published:2013-12-16 Issue:25 Volume:111 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Zhang Siyuan,Zhang Yucheng,Cui Ying,Freysoldt Christoph,Neugebauer Jörg,Lieten Ruben R.,Barnard Jonathan S.,Humphreys Colin J.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.111.256101/fulltext

Reference21 articles.

1. Growth of GaN on Ge(111) by molecular beam epitaxy

2. Demonstration of a III–Nitride/Silicon Tandem Solar Cell

3. Growth of III-nitrides on Si(111) by molecular beam epitaxy Doping, optical, and electrical properties

4. Epitaxial GaN on Si(111): Process control of SiNx interlayer formation

5. Growth of GaN on Si(111): Surfaces and crystallinity of the epifilms and the transport behavior of GaN/Si heterojunctions

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