Ultraviolet Light-Induced Conduction Current in Silicon Nitride Films
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
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1. Influence of high-temperature thermal annealing on paramagnetic point defects in silicon-rich silicon nitride films formed in a single-wafer-type low-pressure chemical vapor deposition reactor;Journal of Vacuum Science & Technology A;2024-07-24
2. Permanent mitigation of loss in ultrathin silicon-on-insulator high-Q resonators using ultraviolet light;Optica;2018-10-10
3. Thermal stability of paramagnetic defect centers in amorphous silicon nitride films;Japanese Journal of Applied Physics;2014-04-03
4. Thermal annealing effect on ultraviolet-light-induced leakage current in low-pressure chemical vapor deposited silicon nitride films;Thin Solid Films;2014-01
5. Effect of Metal Work Function on Conduction Current in Silicon Nitride Films after Exposure to Ultraviolet Illumination;Journal of the Vacuum Society of Japan;2014
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