Thermal stability of paramagnetic defect centers in amorphous silicon nitride films
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
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Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Influence of high-temperature thermal annealing on paramagnetic point defects in silicon-rich silicon nitride films formed in a single-wafer-type low-pressure chemical vapor deposition reactor;Journal of Vacuum Science & Technology A;2024-07-24
2. Erratum: “Thermal stability of paramagnetic defect centers in amorphous silicon nitride films”;Japanese Journal of Applied Physics;2017-11-07
3. Spin transport, magnetoresistance, and electrically detected magnetic resonance in amorphous hydrogenated silicon nitride;Applied Physics Letters;2016-08-08
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