New scaling guidelines for MNOS nonvolatile memory devices
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx1/16/3091/00097417.pdf?arnumber=97417
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4. Hole trapping characteristics of silicon carbonitride (SiCN)-based charge trapping memories evaluated by the constant-current carrier injection method;Materials Science in Semiconductor Processing;2017-11
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