Hole trapping characteristics of silicon carbonitride (SiCN)-based charge trapping memories evaluated by the constant-current carrier injection method
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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1. Charge transport in SiCN/Si heterostructures;Materials Science in Semiconductor Processing;2022-06
2. Dependence of optical properties on composition of silicon carbonitride thin films deposited at low temperature by PECVD;Journal of Non-Crystalline Solids;2021-01
3. SiCN films: preparation, properties and practical application (review);Optoelektronìka ta napìvprovìdnikova tehnìka;2020-12-31
4. Hole trapping capability of silicon carbonitride charge trap layers;The European Physical Journal Applied Physics;2020-07
5. Analysis of Conduction and Charging Mechanisms in Atomic Layer Deposited Multilayered HfO2/Al2O3 Stacks for Use in Charge Trapping Flash Memories;Advances in Condensed Matter Physics;2018
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