Data Retention Characteristics of Nitride-Based Charge Trap Memory Devices with High-kDielectrics and High-Work-Function Metal Gates for Multi-Gigabit Flash Memory-Reference-Cited by-同舟云学术

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Data Retention Characteristics of Nitride-Based Charge Trap Memory Devices with High-kDielectrics and High-Work-Function Metal Gates for Multi-Gigabit Flash Memory

Published:2006-04-25 Issue:4B Volume:45 Page:3213-3216
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lee Jang-Sik,Kang Chang-Seok,Shin Yoo-Cheol,Lee Chang-Hyun,Park Ki-Tae,Sel Jong-Sun,Kim Viena,Choe Byeong-In,Sim Jae-Sung,Choi Jungdal,Kim Kinam

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

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2. Charge trap modeling based on mobility–lifetime (μτ) product for NAND flash program operation;Japanese Journal of Applied Physics;2021-08-13

3. Charge Trapping in Amorphous Dielectrics for Secure Charge Storage;ACS Applied Materials & Interfaces;2021-02-23

4. Nonvolatile Multistates Memories for High-Density Data Storage;ACS Applied Materials & Interfaces;2020-08-19

5. Initial growth analysis of ALD Al2O3 film on hydrogen-terminated Si substrate via in situ XPS;Japanese Journal of Applied Physics;2020-01-01

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