Nonvolatile Multistates Memories for High-Density Data Storage-Reference-Cited by-同舟云学术

Nonvolatile Multistates Memories for High-Density Data Storage

Published:2020-08-19 Issue:38 Volume:12 Page:42449-42471
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Cao Qiang¹,Lü Weiming¹,Wang X. Renshaw²^ORCID,Guan Xinwei³,Wang Lan⁴,Yan Shishen¹^ORCID,Wu Tom³^ORCID,Wang Xiaolin^ORCID

Affiliation:

1. Spintronics Institute, University of Jinan, Jinan 250022, China

2. School of Physical and Mathematical Sciences & School of Electrical and Electronic Engineering, Nanyang Technological University, 639798 Singapore

3. School of Materials Science and Engineering, University of New South Wales, Sydney, New South Wales 2052, Australia

4. School of Science, ARC Centre of Excellence in Future Low-Energy Electronics Technologies, RMIT University, Melbourne, Victoria 3001, Australia

Funder

State Administration of Foreign Experts Affairs

Ministry of Education of the People's Republic of China

Ministry of Education - Singapore

Australian Research Council

National Natural Science Foundation of China

Natural Science Foundation of Shandong Province

Nanyang Technological University

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.0c10184

Reference268 articles.

1. Scaling the bandwidth wall

2. Wang, F. Energy Efficient Memory Technologies. In IEEE Green Energy and Smart Systems Conference (IGESSC), 2017; pp 1–5.

3. Ishimaru, K. In Non-Volatile Memory Technology for Data Age, 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2018; pp 1–4.

4. Kinam, K.; Jung Hyuk, C.; Jungdal, C.; Hong Sik, J. The Future Prospect of Nonvolatile Memory. In IEEE VLSI-TSA International Symposium on VLSI Technology, April 25–27, 2005; VLSI-TSA-Tech, 2005; pp 88–94.

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