Theoretical Study on Epitaxial Graphene Growth by Si Sublimation from SiC(0001) Surface
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference27 articles.
1. Graphene: Status and Prospects
2. 100-GHz Transistors from Wafer-Scale Epitaxial Graphene
3. Microscopic thickness determination of thin graphite films formed onSiCfrom quantized oscillation in reflectivity of low-energy electrons
4. Local conductance measurement of few-layer graphene on SiC substrate using an integrated nanogap probe
5. Thickness Determination of Graphene Layers Formed on SiC Using Low-Energy Electron Microscopy
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1. Atomistic insight into the initial stage of graphene formation on SiC(0001) surfaces;Physical Review Materials;2022-09-30
2. Epitaxial graphene on 6H–SiC(0001) : Defects in SiC investigated by STEM;Physical Review Materials;2019-09-17
3. Atomistic mechanism of graphene growth on a SiC substrate: Large-scale molecular dynamics simulations based on a new charge-transfer bond-order type potential;Physical Review B;2018-03-09
4. Structure and evolution of semiconducting buffer graphene grown on SiC(0001);Physical Review B;2017-11-13
5. Microscopic Mechanisms of Initial Formation Process of Graphene on SiC(0001) Surfaces: Selective Si Desorption from Step Edges;The Journal of Physical Chemistry C;2017-02-28
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