Single Source Heterojunction Metal–Oxide–Semiconductor Transistors for Quasi-Ballistic Devices: Optimization of Source Heterostructures and Electron Velocity Characteristics at Low Temperature-Reference-Cited by-同舟云学术

Single Source Heterojunction Metal–Oxide–Semiconductor Transistors for Quasi-Ballistic Devices: Optimization of Source Heterostructures and Electron Velocity Characteristics at Low Temperature

Published:2011-01-20 Issue: Volume:50 Page:010107
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Mizuno Tomohisa,Moriyama Yoshihiko,Tezuka Tsutomu,Sugiyama Naoharu,Takagi Shin-ichi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference10 articles.

1. Understanding Quasi-Ballistic Transport in Nano-MOSFETs: Part I—Scattering in the Channel and in the Drain

2. On the physical understanding of the kT-layer concept in quasi-ballistic regime of transport in nanoscale devices

3. Ballistic metal‐oxide‐semiconductor field effect transistor

4. Essential physics of carrier transport in nanoscale MOSFETs

5. Ultrahigh‐Speed Bipolar Transistors

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