C-atom-induced bandgap modulation in two-dimensional (100) silicon carbon alloys-Reference-Cited by-同舟云学术

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C-atom-induced bandgap modulation in two-dimensional (100) silicon carbon alloys

Published:2016-03-03 Issue:4S Volume:55 Page:04EB02
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Mizuno Tomohisa,Nagamine Yoshiki,Omata Yuhsuke,Suzuki Yuhya,Urayama Wako,Aoki Takashi,Sameshima Toshiyuki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/55/i=4S/a=04EB02/pdf

Reference37 articles.

1. Silicon-on-Insulator Technology: Materials to VLSI

2. Device Design and Electron Transport Properties of Uniaxially Strained-SOI Tri-Gate nMOSFETs

3. Electro-Luminescence from Ultra-Thin Silicon

4. Observation of optical gain in ultra-thin silicon resonant cavity light-emitting diode

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1. Near infrared photoluminescence of Si1–xGex quantum dots fabricated by double hot Ge+/Si+ implantation into SiO2 layer;Journal of Applied Physics;2023-04-13

2. Si surface orientation dependence of SiC-dot formation in bulk-Si using hot-C⁺-ion implantation technique;Journal of Applied Physics;2022-02-21

3. Physical mechanism for photon emissions from group-IV-semiconductor quantum-dots in quartz-glass and thermal-oxide layers;Japanese Journal of Applied Physics;2022-02-09

4. Group-IV-semiconductor quantum-dots in thermal SiO2 layer fabricated by hot-ion implantation technique: different wavelength photon emissions;Japanese Journal of Applied Physics;2021-02-12

5. SiC quantum dot formation in SiO2 layer using double hot-Si+/C+-ion implantation technique;Japanese Journal of Applied Physics;2020-02-06

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