SiC quantum dot formation in SiO2 layer using double hot-Si+/C+-ion implantation technique
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
https://iopscience.iop.org/article/10.7567/1347-4065/ab5bc4/pdf
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A first-principles study of the electronic, vibrational, and optical properties of planar SiC quantum dots;Journal of Physics D: Applied Physics;2023-11-15
2. Luminescent properties of the structures with embedded silicon nanoclusters: Influence of technology, doping and annealing (Review);Semiconductor Physics, Quantum Electronics and Optoelectronics;2023-09-20
3. Influence of High Temperature N2 Annealing on Photoluminescence of SiC and Si Quantum Dots in SiO2 Layer;2022 International Symposium on Semiconductor Manufacturing (ISSM);2022-12-12
4. Si surface orientation dependence of SiC-dot formation in bulk-Si using hot-C+-ion implantation technique;Journal of Applied Physics;2022-02-21
5. Physical mechanism for photon emissions from group-IV-semiconductor quantum-dots in quartz-glass and thermal-oxide layers;Japanese Journal of Applied Physics;2022-02-09
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