Influence of High Temperature N2 Annealing on Photoluminescence of SiC and Si Quantum Dots in SiO2 Layer
Author:
Affiliation:
1. Kanagawa University,Dept. Science,Hiratsuka,Japan
2. Toshiba Nanoanalysis Corporation,Physical Analysis Technology Center,Yokohama,Japan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10026850/10026886/10026911.pdf?arnumber=10026911
Reference9 articles.
1. Size-dependent photoluminescence from surface-oxidized Si nanocrystals in a weak confinement regime
2. Near-IR and UV Photon Emissions from SiGe- and C-Quantum-Dots Fabricated by Hot-Ion Implantation into Si-Oxide Layers;mizuno;Ext Abstr Int Conf Solid State Devices and Materials,0
3. Physical mechanism for photon emissions from group-IV-semiconductor quantum-dots in quartz-glass and thermal-oxide layers
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