Material structure of two-/three-dimensional Si–C layers fabricated by hot-C+-ion implantation into Si-on-insulator substrate-Reference-Cited by-同舟云学术

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Material structure of two-/three-dimensional Si–C layers fabricated by hot-C+-ion implantation into Si-on-insulator substrate

Published:2017-03-08 Issue:4S Volume:56 Page:04CB03
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Mizuno Tomohisa,Omata Yuhsuke,Nagamine Yoshiki,Aoki Takashi,Sameshima Toshiyuki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/56/i=4S/a=04CB03/pdf

Reference40 articles.

1. Silicon-on-Insulator Technology: Materials to VLSI

2. Device Design and Electron Transport Properties of Uniaxially Strained-SOI Tri-Gate nMOSFETs

3. Electro-Luminescence from Ultra-Thin Silicon

4. Observation of optical gain in ultra-thin silicon resonant cavity light-emitting diode

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1. Near infrared photoluminescence of Si1–xGex quantum dots fabricated by double hot Ge+/Si+ implantation into SiO2 layer;Journal of Applied Physics;2023-04-13

2. Plasma enhanced light emission from the Si+-N+ co-implanted SOI in the violet-blue waveband;Optical Materials;2022-09

3. Si surface orientation dependence of SiC-dot formation in bulk-Si using hot-C⁺-ion implantation technique;Journal of Applied Physics;2022-02-21

4. Physical mechanism for photon emissions from group-IV-semiconductor quantum-dots in quartz-glass and thermal-oxide layers;Japanese Journal of Applied Physics;2022-02-09

5. Thermally Robust High‐Resistance Layers on Low‐Resistance Silicon Synthesized by Molecular CO + Ion Implantation;physica status solidi (a);2021-05-03

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