Thermally Robust High‐Resistance Layers on Low‐Resistance Silicon Synthesized by Molecular CO + Ion Implantation-Reference-Cited by-同舟云学术

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Thermally Robust High‐Resistance Layers on Low‐Resistance Silicon Synthesized by Molecular CO + Ion Implantation

Published:2021-05-03 Issue:23 Volume:218 Page:2100109
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Popov Vladimir P.¹^ORCID,Tarkov Sergey M.¹,Tikhonenko Fedor V.¹,Antonov Valentin A.¹,Tyschenko Ida E.¹,Simakin Sergey G.²,Rudenko Konstantin V.²

Affiliation:

1. Rzhanov Institute of Semiconductor Physics SB RAS Novosibirsk 630090 Russia

2. Valiev Institute of Physics and Technology RAS Yaroslavl 150007 Russia

Funder

Russian Foundation for Basic Research

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202100109

Reference24 articles.

1. Post-process porous silicon for 5G applications

2. Fundamental properties of intrinsic gettering of iron in a silicon wafer

3. A.Jansman J.van Beek M.van Delden A.Kemmeren A.den Dekker F.Widdershoven inProc. of 33rd Conf. on Europ. Sol.-St. Dev. Res. ESSDERC ’03 Estoril Portugal 2003 p.3.

4. Fabrication of very high resistivity Si with low loss and cross talk

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-resistance thermally stable silicon layers produced by the CO+ ion implantation;Materials Letters;2022-07

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