Ballistic metal‐oxide‐semiconductor field effect transistor
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.357263
Reference12 articles.
1. High transconductance and velocity overshoot in NMOS devices at the 0.1- mu m gate-length level
2. Quantum interference in ultrashort channel length silicon metal‐oxide‐semiconductor field‐effect transistors
3. Observation of electron velocity overshoot in sub-100-nm-channel MOSFET's in Silicon
4. Electron velocity overshoot at room and liquid nitrogen temperatures in silicon inversion layers
5. Monte-Carlo simulation of submicrometer Si n-MOSFETs at 77 and 300 K
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