High transconductance and velocity overshoot in NMOS devices at the 0.1- mu m gate-length level-Reference-Cited by-同舟云学术

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High transconductance and velocity overshoot in NMOS devices at the 0.1- mu m gate-length level

Published:1988-09 Issue:9 Volume:9 Page:464-466
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Sai-Halasz G.A.,Wordeman M.R.,Kern D.P.,Rishton S.,Ganin E.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/55/366/00006946.pdf?arnumber=6946

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