A Compact Drain Current Model for Graded Channel DMDG Structure with High-k Material
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-022-01830-4.pdf
Reference51 articles.
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5. Chen S-S, Kuo JB (1996) Deep submicrometer double-gate fully-depleted SOI PMOS devices: a concise short-channel effect threshold voltage model using a quasi-2D approach. IEEE Trans Electron Devices 43(9):1387–1393
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