Quantum interference in ultrashort channel length silicon metal‐oxide‐semiconductor field‐effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106121
Reference4 articles.
1. A metal‐oxide‐semiconductor field‐effect transistor with a 20‐nm channel length
2. Possible observation of transmission resonances inGaAs−AlxGa1−xAstransistors
3. Localization and Electron-Electron Interaction Effects in Submicron-Width Inversion Layers
4. Electronic properties of two-dimensional systems
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