Investigation of the Carrier Velocity in Short Channel Ge MOSFET with NiGe Metal Source/Drain
Author:
Affiliation:
1. School of Micro-Nano Electronics, Zhejiang University,Hangzhou,China,311200
Funder
Zhejiang University
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10531806/10531771/10532074.pdf?arnumber=10532074
Reference9 articles.
1. Enhancement of hot-electron generation rate in Schottky source metal–oxide–semiconductor field-effect transistors
2. New experimental findings on hot carrier transport under velocity saturation regime in Si MOSFETs
3. Aggressive EOT Scaling of Ge pMOSFETs With HfO2/AlOx/GeOxGate-Stacks Fabricated by Ozone Postoxidation
4. On experimental determination of carrier velocity in deeply scaled NMOS: how close to the thermal limit?
5. Ballistic metal‐oxide‐semiconductor field effect transistor
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